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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1735 DESCRIPTION *High Voltage *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w 1500 1500 700 7 1.5 5 0.6 V V .cn mi e V V IC Collector Current-Continuous A ICP Collector Current-Peak A IB B Base Current- Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC 60 W Tj 150 Tstg Storage Temperature Range -55-150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)EBO VCE(sat) VBE(sat) hFE PARAMETER Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain CONDITIONS IE= 500mA; IC= 0 IC= 1A; IB= 0.4A B 2SD1735 MIN 7 TYP MAX UNIT V 8.0 1.5 6 30 10 V V IC= 1A; IB= 0.4A B IC= 0.5A; VCE= 5V VCB= 750V; IE= 0 A mA MHz ICBO Collector Cutoff Current VCB= 1500V; IE= 0 fT Transition Frequency Switching Times, Resistive Load ts tf Storage Time Fall Time ww w sem isc . IC= 0.5A; VCE= 10V .cn i 1.0 2 1.0 0.2 s s IC= 1A; IB1= 0.3A; IB2= -0.6A, VCC= 200V isc Websitewww.iscsemi.cn |
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